Founded in Ithaca, New York by Dr. Richard J. Brown and Dr. James R. Shealy, Odyssey Semiconductor Technologies aims to revolutionize the semiconductor industry by developing proprietary Gallium Nitride (GaN) processing technology. This technology allows for the realization of vertical current conduction GaN devices, which can extend application voltages from 1,000 V to over 10,000V. This makes GaN power switching devices suitable for demanding applications such as electric vehicles, industrial motor control, and energy grid applications. Odyssey Semiconductor Technologies' disruptive proprietary technology has the potential to replace silicon carbide (SiC) as the dominant high voltage power switching semiconductor material of choice, making it a company to watch in the semiconductor industry.